AM5521C preliminary publication order number: ds-AM5521C_a analog power 1 these miniature surface mount mosfets utilize a high cell density trench process to provide low r ds(on) and to ensure minimal power loss and heat dissipation. typical applications are dc-dc converters and power management in portable and battery-powered products such as computers, printers, pcmcia cards, cellular and cordless telephones. n & p-channel 20-v (d-s) mosfet ? low r ds(on) provides higher efficiency and extends battery life ? low thermal impedance copper leadframe dfn2x3 saves board space ? fast switching speed ? high performance trench technology notes a. surface mounted on 1? x 1? fr4 board. b. pulse width limited by maximum junction temperature symbol n-channel p-channel units v ds 20 -20 v gs 8 8 t a =25 o c 5 -4.7 t a =70 o c 4.1 -3.9 i dm 8 -8 i s 4.5 -4.5 a t a =25 o c t a =70 o c t j , t stg o c power dissipation a p d operating junction and storage temperature range w 2.1 1.3 -55 to 150 continuous source current (diode conduction) a absolute maximum ratings (t a = 25 o c unless otherwise noted) parameter pulsed drain current b v gate-source voltage drain-source voltage continuous drain current a i d a v ds (v) r ds(on) ( ) i d (a) 0.058 @ v gs = 4.5v 5 0.077 @ v gs = 2.5v 4.3 0.064 @ v gs = -4.5v -4.7 0.085 @ v gs = -2.5v -4.1 product summary 20 -20 s1 g1 s2 g2 12 3 4 dfn2x3 top view d 1 d 1 d 2 d 2 87 6 5 d 1 s 1 g 1 n-channel mosfet s 2 d 2 g 2 p-channel mosfet symbol maximum units t <= 10 sec 62.5 o c/w steady state 80 o c/w thermal resistance ratings parameter r ja maximum junction-to-ambient a
AM5521C preliminary publication order number: ds-AM5521C_a analog power 2 analog power (apl) reserves the right to make changes without fu rther notice to any products herein. apl makes no warranty, representation or guarantee regarding the suitability of its produ cts for any particular purpose, nor does apl assume any liability arising out of the application or use of any product or circuit, and specifically dis claims any and all liability, including without lim itation special, consequential or incidental damages. ?typical? parameters which may be provide d in apl data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. all operati ng parameters, including ?typicals? must be validat ed for each customer application by customer?s technical experts. apl does not convey any license under its patent rights nor the rights of others. apl products are not designed, intended, or authorized for use as components in sy stems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the apl product could create a situ ation where personal injury or death may occur. should buyer purchase or use apl products for any s uch unintended or unauthorized application, buyer s hall indemnify and hold apl and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, da mages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any cl aim of personal injury or death associated with suc h unintended or unauthorized use, even if such claim alleges that apl was negligent regarding the design or manufacture of the part. apl is an equal opportunity/affirmative action employer. notes a. pulse test: pw <= 300us duty cycle <= 2%. b. guaranteed by design, not subject to production testing. ch min typ max v gs = v ds , i d = 250 ua n 1 v gs = v ds , i d = -250 ua p -1 v ds = 0 v, v gs = 8 v n 100 v ds = 0 v, v gs = -8 v p -100 v ds = 16 v, v gs = 0 v n 1 v ds = -16 v, v gs = 0 v p -1 v ds = 16 v, v gs = 0 v, t j = 55 o c n 10 v ds = -16 v, v gs = 0 v, t j = 55 o c p -10 v ds = 5 v, v gs = 4.5 v n 5 v ds = -5 v, v gs = -4.5 v p -5 v gs = 4.5 v, i d = 1 a n 0.058 v gs = -4.5 v, i d = 1 a p 0.077 v gs = 2.5 v, i d = 1 a n 0.064 v gs = -2.5 v, i d = -1 a p 0.085 v ds = 5 v, i d = 1 a n 10 v ds = -5 v, i d = 1 a p 5 i s = 1 a, v gs = 0 v n 0.80 i s = -1 a, v gs = 0 v p -0.83 n 2 p 7 n 0.4 p 1 n 0.7 p 2 n 6 p 10 n 9 p 1 n 5 p 11 n 16 p 12 s nc gate-drain charge q gd dynamic b n-channel v ds =15v, v gs =4.5v, i d =1a p-channel v ds =-15v, v gs =-4.5v, i d =-1a diode forward voltage a v sd total gate charge q g specifications (t a = 25 o c unless otherwise noted) a static test conditions v symbol parameter gate-body leakage current gate-threshold voltage v gs(th) limits i dss unit on-state drain current a i d(on) i gss a a zero gate voltage drain current t r t d(off) turn-on delay time rise time a drain-source on-resistance a r ds(on) ns n-chaneel v dd =15v, v gs =4.5v, i d =1a , r gen =15 , p-channel v dd =-15v, v gs =-4.5v, i d =-1a r gen =15 fall-time t f turn-off delay time t d(on) forward tranconductance a g fs s gate-source charge q gs
AM5521C preliminary publication order number: ds-AM5521C_a analog power 3 package information
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